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  • May 13, 2016
    Strong-Field Resonant Dynamics in Semiconductors

    research — Investigating light-matter interaction beyond the applicability of the conventional nonlinear optics, we challenged the assumption that light-field control requires the laser frequency to be far from any resonant transitions. Specifically, we studied the interplay between intraband electron motion and Rabi oscillations. In the case where the central frequency of a laser pulse was close to the band gap of GaAs, we observed a new kind of nonlinear resonance: “kicked anharmonic Rabi oscillations” (KARO). In this regime, interband transitions mainly take place when electrons pass near the Brillouin zone center. Interference between such kick-like transitions leads to residual population distributions that are strongly asymmetric in reciprocal space. Consequently, in this regime, a laser pulse efficiently induces a residual electric current that is controlled by the carrier-envelope phase of the pulse.